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Neuromorphic Computing Memristive Device
Resistance switching devices, also known as memristive devices, represent the next generation in computing. With a typical metal/insulator/metal structure, memristors change resistance based on past current flow and retain this new resistance even when turned off. This allows memristors to store data without needing constant power like in traditional computer memory. Memristors have other desirable properties such as low power consumption, fast switching speed, and great cycling ability. These properties open up next generation computing applications in non-volatile memory, reconfigurable switches, bio-inspired neuromorphic computing, and radiofrequency switches.

 

Here, Dr. Qiangfei Xia and Dr. Joshua Yang have invented a Ta/HfO2/Pt memristive device that can be used for multilevel memory and for neuromorphic computing. The device exhibits bipolar resistive switching with low programming voltage (~1.5 V), high endurance (100 billion cycles), and long data retention time (37,000 years at 85 C). The device can be programmed to multiple resistance states with long retention time for each individual state. Finally, spike dependent plasticity (STDP) is also demonstrated for this device. The device also has the advantage of being able to be fabricated using traditional CMOS materials and techniques.

Published: 6/26/2023   |   Inventor(s): Qiangfei Xia, Hao Jiang, Jianhua Yang
Category(s): Devices, Electronics