Electric power generation from ambient moisture using microbial nanowires
This invention demonstrates thin-film devices made from electrically conductive protein nanowires (e-PNs) that can generate continuous electric power in ambient environment driven by the self-maintained moisture gradient that forms within the film when exposed to the humidity naturally present in the air. The devices can produce substantial voltages at relative humidity as low as 20%.
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Magnetohydrodynamic clearing and antibody staining
This invention provides devices and methods for the interrogation of molecular structure and function of virtually any biological tissue by allowing histological analyses of large biological tissues with numerous biomarkers (antibodies, RNAs, chemical labels). In addition, this technique maintains the integrity of large tissue samples making it possible to perform multiple rounds of histological staining to resolve 3-D organization of biological structures at the macroscopic and microscope scale.
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Microfluidic Devices with Graphene Electrodes
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ARTIFICIAL NEURONS USING DIFFUSIVE MEMRISTOR
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Seatbelt System for Buses – Retrofit or New
A novel seatbelt system has been developed that can be installed independent of the existing bus seats that did not have seatbelts. The invention can be adaptable for inter-city buses (coaches), as well as mid-sized buses and school buses. Most other seatbelt systems apply only to a specific seat design whereas this invention facilitates a seamless transition for the different seat configurations of the intended buses. Based on the design and condition of the sets, the strength of the support can be uniquely designed and customized to support the seatbelt design, while maintaining the integrity of the existing bus frame structure. Thus, this seatbelt system can be expected to be universal and economical.
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Diffusive Memristor as a Synapse
Neuromorphic computing, systems designed to mimic the biological nervous system, require far less power than current computer processors. The increased efficiency makes feasible artificial intelligence applications for smaller, hand-held devices (e.g. smartphones, tablets). To this end, UMass inventors have designed hardware components that mimic neuronal synapses (Figure A). Specifically, diffusive Ag-in-oxide memristors show a temporal response during and after stimulation similar to that of a biological synapse. The novel diffusive memristor and its synapse-like dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses and represent a major advancement in a hardware implementation for neuromorphic computing.
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Electrically-heated Fiber, Fabric, or Textile for Heated Apparel
This invention provides a process to transform commercial textiles and threads into lightweight fabric heaters for local climate control and personal thermal management, and electrically-heated fiber, fabric, or textile that can be incorporated into a variety of garments.
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Polymer-coated Supercapacitors
This invention provides polymer-coated supercapacitors for energy storage applications.
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Demineralized Bone Paper and Applications Thereof
This invention provides structurally well-defined, three-dimensional bone tissue grafts produced from stacked demineralized bone paper (DBP), methods for treating a subject using such bone tissue grafts, methods for making DBP, and in vitro assay systems and methods for assaying the effect of an agent on bone development or health.
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Economical Buffer Layer Boosts Performance of Organic Solar Cells
New compositions of matter have been invented, specifically organic buffer layer materials that can greatly enhance power conversion efficiency (PCE) of organic photovoltaic (OPV) devices and can effectively functionalize metal electrodes. Conventional-architecture OPV devices made using the new buffer layer have average PCEs greater than 8%, with the highest PCE value exceeding 9.5%. This new buffer layer can be used with Ag, Cu, and Au cathodes, opening routes to all-solution-based device fabrication and roll-to-roll processing. In addition, the new buffer layer materials can be applied at a layer thickness of up to 55 nm, avoiding processing challenges that occur with ultrathin buffer layers and enabling a simplified and reproducible process for device fabrication.
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