Memristive devices are characterized by their present resistance being dependent on the current that last passed through them. In this invention, a memristive RF switch is created by having two micro-electrodes with a small air gap, e.g., 50nm or less, between them. When in the “off” state, the air gap between the electrodes gives the device a very high resistance. When a “setting voltage” is applied between the electrodes, a conductive filament is self-created from one electrode, which bridges the air gap and contacts the other electrode. The device in now the “on” state, and resistance is very low. To turn the device off again, a “resetting voltage” having opposite polarity is applied, and the conductive filament’s connection to the other electrode is broken.
